Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
₪ 210.00
₪ 4.20 Each (In a Tube of 50) (ex VAT)
₪ 245.70
₪ 4.914 Each (In a Tube of 50) (inc. VAT)
50
₪ 210.00
₪ 4.20 Each (In a Tube of 50) (ex VAT)
₪ 245.70
₪ 4.914 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 4.20 | ₪ 210.00 |
250 - 950 | ₪ 2.76 | ₪ 138.00 |
1000 - 2450 | ₪ 2.235 | ₪ 111.75 |
2500+ | ₪ 1.89 | ₪ 94.50 |
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.