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N-channel MOSFET,IRF640 18A 200V

RS Stock No.: 485-9165Brand: STMicroelectronicsManufacturers Part No.: IRF640
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

15.75mm

Width

4.6mm

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Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
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Stock information temporarily unavailable.

P.O.A.

N-channel MOSFET,IRF640 18A 200V

P.O.A.

N-channel MOSFET,IRF640 18A 200V
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
₪ 13.724Each (In a Tube of 50) (ex VAT)

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

15.75mm

Width

4.6mm

You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
₪ 13.724Each (In a Tube of 50) (ex VAT)