Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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₪ 18.683
Each (In a Pack of 5) (ex VAT)
₪ 21.859
Each (In a Pack of 5) (inc. VAT)
5
₪ 18.683
Each (In a Pack of 5) (ex VAT)
₪ 21.859
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 18.683 | ₪ 93.41 |
25 - 45 | ₪ 14.348 | ₪ 71.74 |
50 - 120 | ₪ 13.103 | ₪ 65.52 |
125 - 245 | ₪ 11.83 | ₪ 59.15 |
250+ | ₪ 11.397 | ₪ 56.98 |
Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details