Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 1.147
Each (Supplied on a Reel) (ex VAT)
₪ 1.342
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
₪ 1.147
Each (Supplied on a Reel) (ex VAT)
₪ 1.342
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
250 - 725 | ₪ 1.147 | ₪ 28.67 |
750 - 1475 | ₪ 1.119 | ₪ 27.97 |
1500 - 2975 | ₪ 0.965 | ₪ 24.12 |
3000+ | ₪ 0.769 | ₪ 19.23 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.