Technical documents
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 1.426
Each (Supplied on a Reel) (ex VAT)
₪ 1.668
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 1.426
Each (Supplied on a Reel) (ex VAT)
₪ 1.668
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 240 | ₪ 1.426 | ₪ 14.26 |
250 - 490 | ₪ 1.384 | ₪ 13.84 |
500 - 990 | ₪ 1.328 | ₪ 13.28 |
1000+ | ₪ 1.119 | ₪ 11.19 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.