onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23

RS Stock No.: 761-3684Brand: onsemiManufacturers Part No.: MMBFJ112
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 5mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Country of Origin

China

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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₪ 2.671

Each (In a Pack of 25) (ex VAT)

₪ 3.125

Each (In a Pack of 25) (inc. VAT)

onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23
Select packaging type

₪ 2.671

Each (In a Pack of 25) (ex VAT)

₪ 3.125

Each (In a Pack of 25) (inc. VAT)

onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 225₪ 2.671₪ 66.77
250 - 725₪ 1.231₪ 30.76
750 - 1475₪ 1.105₪ 27.62
1500 - 2975₪ 0.937₪ 23.42
3000+₪ 0.853₪ 21.33

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 5mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Country of Origin

China

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more