Technical documents
Specifications
Brand
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
1.5 → 20mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Product details
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 4.824
Each (In a Pack of 5) (ex VAT)
₪ 5.644
Each (In a Pack of 5) (inc VAT)
5
₪ 4.824
Each (In a Pack of 5) (ex VAT)
₪ 5.644
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 4.824 | ₪ 24.12 |
25 - 95 | ₪ 2.503 | ₪ 12.52 |
100 - 245 | ₪ 1.412 | ₪ 7.06 |
250 - 495 | ₪ 1.328 | ₪ 6.64 |
500+ | ₪ 1.231 | ₪ 6.15 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
1.5 → 20mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Product details
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.