Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
2.0 → 6.5mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 6.838
Each (In a Pack of 10) (ex VAT)
₪ 8.00
Each (In a Pack of 10) (inc VAT)
10
₪ 6.838
Each (In a Pack of 10) (ex VAT)
₪ 8.00
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | ₪ 6.838 | ₪ 68.38 |
30 - 140 | ₪ 4.964 | ₪ 49.64 |
150 - 740 | ₪ 4.041 | ₪ 40.41 |
750 - 1490 | ₪ 3.692 | ₪ 36.92 |
1500+ | ₪ 3.328 | ₪ 33.28 |
Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
2.0 → 6.5mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
3mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.