Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
₪ 26.10
₪ 2.61 Each (In a Pack of 10) (ex VAT)
₪ 30.54
₪ 3.054 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 26.10
₪ 2.61 Each (In a Pack of 10) (ex VAT)
₪ 30.54
₪ 3.054 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
quantity | Unit price | Per Pack |
---|---|---|
10 - 190 | ₪ 2.61 | ₪ 26.10 |
200 - 390 | ₪ 0.93 | ₪ 9.30 |
400 - 790 | ₪ 0.90 | ₪ 9.00 |
800 - 1590 | ₪ 0.855 | ₪ 8.55 |
1600+ | ₪ 0.615 | ₪ 6.15 |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.