STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 2,346.00
₪ 46.92 Each (Supplied in a Tube) (ex VAT)
₪ 2,744.82
₪ 54.896 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50
₪ 2,346.00
₪ 46.92 Each (Supplied in a Tube) (ex VAT)
₪ 2,744.82
₪ 54.896 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 145 | ₪ 46.92 | ₪ 234.60 |
| 150 - 295 | ₪ 41.355 | ₪ 206.78 |
| 300 - 595 | ₪ 39.795 | ₪ 198.98 |
| 600+ | ₪ 36.27 | ₪ 181.35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products