Disruption To Air Freight Service

Due to the ongoing situation in the region air freight services are being restricted and thus delivery times are being affected. For further information please contact sales@rsisrael.co.il

Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

RS Stock No.: 110-7449Brand: InfineonManufacturers Part No.: IHW30N135R3
brand-logo
View all in IGBTs

Technical documents

Specifications

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2066pF

Maximum Operating Temperature

+175 °C

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 65.38

₪ 21.795 Each (In a Pack of 3) (ex VAT)

₪ 76.50

₪ 25.50 Each (In a Pack of 3) (inc. VAT)

Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
Select packaging type

₪ 65.38

₪ 21.795 Each (In a Pack of 3) (ex VAT)

₪ 76.50

₪ 25.50 Each (In a Pack of 3) (inc. VAT)

Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2066pF

Maximum Operating Temperature

+175 °C

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more