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Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

RS Stock No.: 862-9359Brand: Fairchild SemiconductorManufacturers Part No.: ISL9V3040P3
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Technical documents

Specifications

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

150 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 4.7 x 16.3mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

₪ 90.98

₪ 18.195 Each (In a Pack of 5) (ex VAT)

₪ 106.45

₪ 21.288 Each (In a Pack of 5) (inc. VAT)

Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
Select packaging type

₪ 90.98

₪ 18.195 Each (In a Pack of 5) (ex VAT)

₪ 106.45

₪ 21.288 Each (In a Pack of 5) (inc. VAT)

Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45₪ 18.195₪ 90.98
50 - 195₪ 15.615₪ 78.08
200 - 395₪ 12.795₪ 63.98
400 - 795₪ 12.09₪ 60.45
800+₪ 11.415₪ 57.08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

150 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 4.7 x 16.3mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more