MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

  • Where are MOSFETs used?


    MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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    Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Series Typical Turn-Off Delay Time Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
    2N7002-7-F N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc
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    DiodesZetex N 115 mA 60 V 13.5 Ω 2.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 22 pF@ 25 V - 3 x 1.4 x 1.1mm - 11 ns 7 ns - 1.4mm 1.1mm 3mm - - +150 °C 1 -55 °C Si -
    2N7002P,215 N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia
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    Nexperia N 360 mA 60 V 1.6 Ω 2.4V 1.1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement - 420 mW 30 pF @ 10 V 0.6 nC @ 4.5 V 3 x 1.4 x 1mm - 10 ns 3 ns - 1.4mm 1mm 3mm - - +150 °C 1 -55 °C Si -
    DMN65D8L-7 N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23 Diodes Inc DiodesZetex N 310 mA 60 V 4 Ω 2V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 540 mW 22 pF @ 25 V 0.87 nC @ 10 V 3 x 1.4 x 1.1mm - 12.6 ns 2.7 ns - 1.4mm 1.1mm 3mm - - +150 °C 1 -55 °C Si -
    BSS84,215 P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia
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    Nexperia P 130 mA 50 V 10 Ω 2V 0.8V -20 V, +20 V SOT-23 (TO-236AB) Surface Mount 3 Single Enhancement Small Signal 250 mW 25 pF@ 25 V - 3 x 1.4 x 1mm - - - - 1.4mm 1mm 3mm - - +150 °C 1 -65 °C Si -
    BSS138NH6433XTMA1 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon Infineon N 230 mA 60 V 3.5 Ω 1.4V 0.6V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 360 mW 32 pF @ 25 V 1 nC @ 10V 2.9 x 1.3 x 1mm SIPMOS 6.7 ns 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
    2V7002KT1G N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 320 mA 60 V 2.5 Ω 2.3V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 420 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 3.04 x 1.4 x 1.01mm - 55.8 ns 12.2 ns - 1.4mm 1.01mm 3.04mm - - +150 °C 1 -55 °C Si -
    2V7002LT1G N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 115 mA 60 V 13.5 Ω 2.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 225 mW, 300 mW 50 pF @ 25 V - 3.04 x 1.4 x 1.01mm - 40 ns 20 ns - 1.4mm 1.01mm 3.04mm - - +150 °C 1 -55 °C Si -
    BSZ058N03LSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon Infineon N 40 A 30 V 8.9 mΩ 2.2V 1V -20 V, +20 V TSDSON Surface Mount 8 Single Enhancement Power MOSFET 45 W 1800 pF @ 15 V 22 nC @ 10 V 3.4 x 3.4 x 1.1mm OptiMOS 3 19 ns 4.6 ns - 3.4mm 1.1mm 3.4mm - - +150 °C 1 -55 °C Si -
    BSS138WH6327XTSA1 N-Channel MOSFET, 280 mA, 60 V SIPMOS, 3-Pin SOT-323 Infineon Infineon N 280 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 500 mW 32 pF @ 25 V 1 nC @ 10 V 2 x 1.25 x 0.8mm SIPMOS 6.7 ns 2.2 ns - 1.25mm 0.8mm 2mm - - +150 °C 1 -55 °C Si -
    DMP2008UFG-7 P-Channel MOSFET, 11 A, 20 V, 8-Pin POWERDI3333 Diodes Inc DiodesZetex P 11 A 20 V 17 mΩ 1V - -8 V, +8 V POWERDI3333 Surface Mount 8 Single Enhancement Power MOSFET 41 W 6909 pF @ -10 V 72 nC @ 4.5 V 3.35 x 3.35 x 0.85mm - 291 ns 22 ns - 3.35mm 0.85mm 3.35mm - - +150 °C 1 -55 °C Si -
    DMG1016V-7 Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DiodesZetex N, P 640 mA, 870 mA 20 V 1.3 Ω, 700 mΩ 1V - -6 V, +6 V SOT-563 Surface Mount 6 Isolated Enhancement Small Signal 530 mW 59.76 pF@ -16 V, 60.67 pF@ 16 V 0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V 1.7 x 1.25 x 0.6mm - 26.7 ns, 28.4 ns 5.1 ns - 1.25mm 0.6mm 1.7mm - - +150 °C 2 -55 °C Si -
    BSS138 N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 ON Semiconductor
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    ON Semiconductor N 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 360 mW 27 pF@ 25 V 1.7 nC @ 10 V 2.92 x 1.3 x 0.93mm - 20 ns 2.5 ns - 1.3mm 0.93mm 2.92mm - - +150 °C 1 -55 °C Si -
    BSS123 N-Channel MOSFET, 170 mA, 100 V PowerTrench, 3-Pin SOT-23 ON Semiconductor
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    ON Semiconductor N 170 mA 100 V 6 Ω - 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 360 mW 73 pF@ 25 V 1.8 nC @ 10 V 2.92 x 1.3 x 0.93mm PowerTrench 17 ns 1.7 ns - 1.3mm 0.93mm 2.92mm - - +150 °C 1 -55 °C Si -
    FDV301N N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 ON Semiconductor
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    ON Semiconductor N 500 mA 25 V 9 Ω 1.06V 0.7V +8 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 350 mW 9.5 pF @ 10 V 0.49 nC @ 4.5 V 2.92 x 1.3 x 0.93mm - 3.5 ns 3.2 ns 0.2s 1.3mm 0.93mm 2.92mm 1.2V - +150 °C 1 -55 °C Si -
    NTK3139PT1G P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 ON Semiconductor ON Semiconductor P 870 mA 20 V 2.2 Ω 1.2V - -6 V, +6 V SOT-723 Surface Mount 3 Single Enhancement Power MOSFET 550 mW 113 pF @ -16 V - 1.25 x 0.85 x 0.55mm - 32.7 ns 9 ns - 0.85mm 0.55mm 1.25mm - - +150 °C 1 -55 °C Si -
    DMN65D8LDW-7 Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DiodesZetex N 200 mA 60 V 8 Ω 20V - -20 V, +20 V SOT-363 (SC-88) Surface Mount 6 Isolated Enhancement Power MOSFET 400 mW 22 pF @ 25 V 0.87 nC @ 10 V 2.2 x 1.35 x 1mm - 12 ns 3.3 ns - 1.35mm 1mm 2.2mm - - +150 °C 2 -55 °C Si -
    2N7002,215 N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia
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    Nexperia N 300 mA 60 V 5 Ω 2.5V 1V -30 V, +30 V SOT-23 (TO-236AB) Surface Mount 3 Single Enhancement Power MOSFET 830 mW 31 pF @ 10 V - 3 x 1.4 x 1mm - - - - 1.4mm 1mm 3mm - - +150 °C 1 -65 °C Si -
    BSS138NH6327XTSA2 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon Infineon N 230 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 360 mW 32 pF @ 25 V 1 nC @ 10 V 2.9 x 1.3 x 1mm SIPMOS 6.7 ns 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
    BSS123,215 N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia
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    Nexperia N 150 mA 100 V 6 Ω 2.8V 1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Logic Level MOSFET 250 mW 23 pF @ 25 V - 3 x 1.4 x 1mm - 12 ns 3 ns - 1.4mm 1mm 3mm - - +150 °C 1 -55 °C Si -
    FDMA530PZ P-Channel MOSFET, 6.8 A, 30 V PowerTrench, 6-Pin MLP ON Semiconductor ON Semiconductor P 6.8 A 30 V 35 mΩ - 1V -25 V, +25 V MLP Surface Mount 6 Single Enhancement Power MOSFET 2.4 W 805 pF @ 15 V 16 nC @ 10 V 2 x 2 x 0.75mm PowerTrench 43 ns 6 ns - 2mm 0.75mm 2mm - - +150 °C 1 -55 °C Si -
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