MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12125 products
Vishay
N
2.5 A
60 V
HVMDIP
Through Hole
4
100 mΩ
Enhancement
-
2V
1.3 W
Single
-20 V, +20 V
25 nC @ 10 V
1
5mm
+175 °C
Si
6.29mm
-
3.37mm
-
-55 °C
-
-
Vishay
N
1.3 A
100 V
HVMDIP
Through Hole
4
270 mΩ
Enhancement
-
2V
1.3 W
Single
-20 V, +20 V
16 nC @ 10 V
1
5mm
+175 °C
Si
6.29mm
-
3.37mm
-
-55 °C
-
-
Infineon
N
9.4 A
100 V
IPAK (TO-251)
Through Hole
3
210 mΩ
Enhancement
4V
2V
48 W
Single
-20 V, +20 V
25 nC @ 10 V
1
6.6mm
+175 °C
Si
2.3mm
HEXFET
6.1mm
-
-55 °C
-
-
Vishay
N
600 mA
200 V
HVMDIP
Through Hole
4
1.5 Ω
Enhancement
-
2V
1 W
Single
-20 V, +20 V
8.2 nC @ 10 V
1
5mm
+150 °C
Si
6.29mm
-
3.37mm
-
-55 °C
-
-
Infineon
N
84 A
60 V
TO-220AB
Through Hole
3
12 mΩ
Enhancement
4V
2V
200 W
Single
-20 V, +20 V
130 nC @ 10 V
1
10.54mm
+175 °C
Si
4.69mm
HEXFET
8.77mm
-
-55 °C
-
-
₪ 3.599
Each (In a Pack of 50) (ex VAT)
Check stock
50
Nexperia
N, P
170 mA, 330 mA
50 V, 60 V
SOT-666
Surface Mount
6
3.6 Ω, 13.5 Ω
Enhancement
2.1V
1.1V
500 mW
Isolated
-20 V, +20 V
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
2
1.7mm
+150 °C
Si
1.3mm
-
0.6mm
-
-55 °C
-
-
₪ 0.687
Each (In a Pack of 50) (ex VAT)
Check stock
50
Nexperia
N, P
220 mA, 400 mA
30 V
SOT-666
Surface Mount
6
2.8 Ω, 7.8 Ω
Enhancement
1.1V
0.6V
500 mW
Isolated
-8 V, +8 V
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
2
1.7mm
+150 °C
Si
1.3mm
-
0.6mm
-
-55 °C
-
-
STMicroelectronics
N
10 A
600 V
TO-247
Through Hole
3
750 mΩ
Enhancement
4.5V
3V
156 W
Single
-30 V, +30 V
50 nC @ 10 V
1
15.75mm
+150 °C
Si
5.15mm
MDmesh, SuperMESH
20.15mm
-
-55 °C
-
-
DiodesZetex
P
2.5 A
20 V
SOT-323
Surface Mount
3
180 mΩ
Enhancement
1V
0.4V
700 mW
Single
±12 V
3.5 nC @ 4.5V
1
2.2mm
+150 °C
-
1.35mm
-
1mm
1.1V
-55 °C
-
-
DiodesZetex
P
4 A
20 V
SOT-23
Surface Mount
3
71 mΩ
Enhancement
1V
0.3V
900 mW
Single
±8 V
9.1 nC @ 4.5 V
1
3mm
+150 °C
-
1.4mm
-
1mm
-
-55 °C
AEC-Q101
-
Vishay Siliconix
N
2 A
60 V
SOT-23
Surface Mount
3
600 mΩ
Enhancement
0.46V
1V
3 W
Single
±8 V
2 nC @ 4.5 V
1
3.04mm
+175 °C
Si
1.4mm
TrenchFET
1.02mm
1.2V
-55 °C
AEC-Q101
-
DiodesZetex
P
6.5 A
20 V
SO-8
Surface Mount
8
52 mΩ
Enhancement
1.5V
0.6V
1.6 W
Single
±12 V
19 nC @ 8V
1
4.95mm
+150 °C
-
3.9mm
-
1.5mm
1.2V
-55 °C
-
-
DiodesZetex
P
600 mA
20 V
X1-DFN1212
Surface Mount
3
3 mΩ
Enhancement
1V
0.5V
800 mW
Single
±8 V
0.8 nC @ 8V
1
1.25mm
+150 °C
-
1.25mm
-
0.48mm
1.2V
-55 °C
-
-
DiodesZetex
P
3.8 A
20 V
SOT-23
Surface Mount
3
150 mΩ
Enhancement
1V
0.4V
1.3 W
Single
±8 V
6.3 nC @ 4.5V
1
3mm
+150 °C
-
1.4mm
-
1mm
1.1V
-55 °C
-
-
DiodesZetex
N
407 mA
60 V
X1-DFN1006
Surface Mount
3
3 mΩ
Enhancement
1V
0.6V
500 mW
Single
±20 V
0.45 nC @ 4.5V
1
1.07mm
+150 °C
-
0.67mm
-
0.48mm
1.3V
-55 °C
-
-
DiodesZetex
N
900 mA
20 V
X1-DFN1212
Surface Mount
3
1.6 mΩ
Enhancement
1V
0.45V
890 mW
Single
±12 V
0.7 nC @ 4.5 V
1
1.25mm
+150 °C
-
1.25mm
-
0.48mm
1.2V
-55 °C
-
-
...