Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
₪ 58.50
₪ 2.34 Each (In a Pack of 25) (ex VAT)
₪ 68.44
₪ 2.738 Each (In a Pack of 25) (inc. VAT)
25
₪ 58.50
₪ 2.34 Each (In a Pack of 25) (ex VAT)
₪ 68.44
₪ 2.738 Each (In a Pack of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | ₪ 2.34 | ₪ 58.50 |
125 - 225 | ₪ 2.34 | ₪ 58.50 |
250 - 475 | ₪ 2.325 | ₪ 58.12 |
500 - 1225 | ₪ 2.31 | ₪ 57.75 |
1250+ | ₪ 2.31 | ₪ 57.75 |
Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details