Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
357 W
Package Type
TO-247
Pin Count
3
Transistor Configuration
Single
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P.O.A.
STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
Select packaging type
Production pack (Tube)
2
P.O.A.
STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
Stock information temporarily unavailable.
Select packaging type
Production pack (Tube)
2
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
357 W
Package Type
TO-247
Pin Count
3
Transistor Configuration
Single