STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 124.20
₪ 12.42 Each (Supplied in a Tube) (ex VAT)
₪ 145.31
₪ 14.531 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 124.20
₪ 12.42 Each (Supplied in a Tube) (ex VAT)
₪ 145.31
₪ 14.531 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 18 | ₪ 12.42 | ₪ 24.84 |
| 20 - 38 | ₪ 12.12 | ₪ 24.24 |
| 40 - 98 | ₪ 11.94 | ₪ 23.88 |
| 100+ | ₪ 10.395 | ₪ 20.79 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products