Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
6 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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₪ 6.545
Each (In a Tube of 50) (ex VAT)
₪ 7.658
Each (In a Tube of 50) (inc VAT)
50
₪ 6.545
Each (In a Tube of 50) (ex VAT)
₪ 7.658
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 6.545 | ₪ 327.23 |
250 - 950 | ₪ 5.118 | ₪ 255.91 |
1000 - 2450 | ₪ 3.622 | ₪ 181.09 |
2500+ | ₪ 3.258 | ₪ 162.91 |
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
6 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.