Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
4000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1 W
Maximum Operating Temperature
+150 °C
Length
4.5mm
Height
1.5mm
Width
2.5mm
Dimensions
4.5 x 2.5 x 1.5mm
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P.O.A.
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P.O.A.
25
Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
4000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1 W
Maximum Operating Temperature
+150 °C
Length
4.5mm
Height
1.5mm
Width
2.5mm
Dimensions
4.5 x 2.5 x 1.5mm