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BTA12-600CW3G ON Semiconductor, TRIAC, 600V 12A, Gate Trigger 1.7V 35mA, 3-Pin TO-220
  • Maximum Holding Current 45mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Forward Blocking Voltage 800V
  • Repetitive Peak Reverse Voltage 600V
  • Length 10.28mm
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  • ₪ 2.50
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ON Semiconductor, MCR12DSMT4G, Thyristor, 600V 3-Pin, DPAK
  • Maximum Holding Current 10mA
  • Maximum Operating Temperature +110 °C
  • Repetitive Peak Reverse Voltage 600V
  • Length 6.73mm
  • Brand ON Semiconductor
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  • ₪ 0.71
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ON Semiconductor, NYC0102BLT1G, Silicon Controlled Rectifier, 200V 0.25A 3-Pin, SOT-23
  • Maximum Holding Current 6mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Off-State Current 100µA
  • Repetitive Peak Forward Blocking Voltage 200V
  • Repetitive Peak Reverse Voltage 200V
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  • ₪ 0.08
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ON Semi MMBT3906LT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.4 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 250 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 0.95 V
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  • ₪ 0.12
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ON Semi MMBTA06LT1G NPN Bipolar Transistor, 0.5 A, 80 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.25 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 100 MHz
  • Number of Elements per Chip 1
  • Length 2.9mm
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  • ₪ 57.24
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ON Semi 2N5686G NPN Bipolar Transistor, 50 A, 80 V, 2-Pin TO-204
  • Maximum Collector Emitter Saturation Voltage 5 V
  • Maximum Operating Temperature +200 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 2 V
  • Length 38.86mm
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  • ₪ 0.10
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ON Semi BC847CLT3G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.6 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 100 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 0.9 V
See similar products in Bipolar Transistors
ON Semi MJF18004G NPN High Voltage Bipolar Transistor, 5 A, 450 V, 3-Pin TO-220
  • Maximum Collector Emitter Saturation Voltage 0.75 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 13 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.25 V
See similar products in Bipolar Transistors
ON Semi MJW18020G NPN High Voltage Bipolar Transistor, 30 A, 450 V, 3-Pin TO-247
  • Maximum Collector Emitter Saturation Voltage 2 V dc
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.5 V dc
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ON Semi MMBTA42LT1G NPN High Voltage Bipolar Transistor, 0.5 A, 300 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.5 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 50 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 0.9 V
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ON Semi NJW0281G NPN Bipolar Transistor, 15 A, 250 V, 3-Pin TO-3P
  • Maximum Collector Emitter Saturation Voltage 1 V dc
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Length 15.8mm
See similar products in Bipolar Transistors
ON Semi NJW0302G PNP Bipolar Transistor, 15 A, 250 V, 3-Pin TO-3P
  • Maximum Collector Emitter Saturation Voltage 1 V dc
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Length 15.8mm
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ON Semi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB
  • Maximum Collector Emitter Saturation Voltage 4 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 10.28mm
  • Maximum Collector Base Voltage 100 V
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ON Semiconductor MMBZ5V6ALT1G, Dual Uni-Directional TVS Diode, 24W, 3-Pin SOT-23
  • Diode Configuration Common Anode
  • Maximum Operating Temperature +150 °C
  • ESD protection Yes
  • Number of Elements per Chip 2
  • Length 2.9mm
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ON Semiconductor MMSZ5245BT1G Zener Diode, 15V 5% 0.5 W SMT 2-Pin SOD-123
  • Diode Configuration Single
  • Maximum Operating Temperature +150 °C
  • Zener Type Voltage Regulator
  • Number of Elements per Chip 1
  • Length 2.69mm
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ON Semiconductor NTD2955-1G P-channel MOSFET Transistor, 12 A, 60 V, 3-Pin IPAK
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Typical Turn-On Delay Time 10 ns
  • Brand ON Semiconductor
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  • ₪ 3.80
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ON Semiconductor NTD6414ANT4G N-channel MOSFET Transistor, 32 A, 100 V, 3-Pin DPAK
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Typical Turn-On Delay Time 11 ns
  • Brand ON Semiconductor
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  • ₪ 1.07
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ON Semiconductor NVTR4503NT1G N-channel MOSFET Transistor, 2.5 A, 30 V, 3-Pin SOT-23
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 3.04mm
  • Typical Turn-On Delay Time 4.8 ns, 5.8 ns
  • Brand ON Semiconductor
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  • ₪ 0.48
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ON Semiconductor SMF12CT1G, Quint Uni-Directional TVS Diode, 100W, 6-Pin SC-88
  • Diode Configuration Common Anode
  • Maximum Operating Temperature +125 °C
  • ESD protection Yes
  • Number of Elements per Chip 5
  • Length 2.2mm
See similar products in TVS Diodes
ON Semi MJH11022G NPN Darlington Transistor, 15 A 250 V HFE:100, 3-Pin TO-247
  • Maximum Collector Emitter Saturation Voltage 4 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 3.8 V
  • Length 16.26mm
See similar products in Darlington Transistors
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