P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

RS Stock No.: 124-5399Brand: onsemiManufacturers Part No.: NTD2955-1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.38mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

6.35mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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₪ 5.552

Each (In a Tube of 75) (ex VAT)

₪ 6.496

Each (In a Tube of 75) (inc VAT)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

₪ 5.552

Each (In a Tube of 75) (ex VAT)

₪ 6.496

Each (In a Tube of 75) (inc VAT)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
75 - 300₪ 5.552₪ 416.37
375 - 1425₪ 3.524₪ 264.30
1500 - 3675₪ 2.867₪ 215.00
3750+₪ 2.741₪ 205.56

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.38mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

6.35mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more