Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Country of Origin
Korea, Republic Of
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Stock information temporarily unavailable.
Please check again later.
₪ 11.579
Each (In a Tube of 10) (ex VAT)
₪ 13.547
Each (In a Tube of 10) (inc VAT)
10
₪ 11.579
Each (In a Tube of 10) (ex VAT)
₪ 13.547
Each (In a Tube of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | ₪ 11.579 | ₪ 115.79 |
50 - 90 | ₪ 10.60 | ₪ 106.00 |
100 - 290 | ₪ 9.803 | ₪ 98.03 |
300 - 490 | ₪ 9.747 | ₪ 97.47 |
500+ | ₪ 9.705 | ₪ 97.05 |
Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Country of Origin
Korea, Republic Of
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.