N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH

RS Stock No.: 871-4956Brand: MagnaChipManufacturers Part No.: MDP18N50BTH
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Technical documents

Specifications

Brand

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

236 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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₪ 14.348

Each (In a Tube of 5) (ex VAT)

₪ 16.787

Each (In a Tube of 5) (inc VAT)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH

5

Available in multiples of 5
5₪ 71.74
10₪ 143.48
15₪ 215.21
20₪ 286.95
25₪ 320.93
30₪ 385.12
35₪ 449.31
40₪ 513.49
45₪ 577.68
50₪ 570.55
55₪ 627.60
60₪ 684.66
65₪ 741.71
70₪ 798.77
75₪ 855.82

₪ 14.348

Each (In a Tube of 5) (ex VAT)

₪ 16.787

Each (In a Tube of 5) (inc VAT)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH
Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 71.74
10₪ 143.48
15₪ 215.21
20₪ 286.95
25₪ 320.93
30₪ 385.12
35₪ 449.31
40₪ 513.49
45₪ 577.68
50₪ 570.55
55₪ 627.60
60₪ 684.66
65₪ 741.71
70₪ 798.77
75₪ 855.82

Buy in bulk

quantityUnit pricePer Tube
5 - 20₪ 14.348₪ 71.74
25 - 45₪ 12.837₪ 64.19
50 - 145₪ 11.411₪ 57.05
150 - 345₪ 10.81₪ 54.05
350+₪ 10.362₪ 51.81

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

236 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more