N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MagnaChip MDF9N50BTH

RS Stock No.: 871-4930Brand: MagnaChipManufacturers Part No.: MDF9N50BTH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

15.7 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

Korea, Republic Of

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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₪ 6.558

Each (In a Tube of 10) (ex VAT)

₪ 7.673

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MagnaChip MDF9N50BTH
Select packaging type

₪ 6.558

Each (In a Tube of 10) (ex VAT)

₪ 7.673

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MagnaChip MDF9N50BTH
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tube
10 - 40₪ 6.558₪ 65.58
50 - 90₪ 4.587₪ 45.87
100+₪ 4.587₪ 45.87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

15.7 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

Korea, Republic Of

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more