N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH

RS Stock No.: 871-4937Brand: MagnaChipManufacturers Part No.: MDF7N65BTH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH
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P.O.A.

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH
Stock information temporarily unavailable.
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

China