N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH

RS Stock No.: 871-4924Brand: MagnaChipManufacturers Part No.: MDF18N50BTH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

Korea, Republic Of

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P.O.A.

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH

P.O.A.

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH
Stock information temporarily unavailable.

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Country of Origin

Korea, Republic Of