Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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₪ 8.279
Each (In a Tube of 10) (ex VAT)
₪ 9.686
Each (In a Tube of 10) (inc VAT)
10
₪ 8.279
Each (In a Tube of 10) (ex VAT)
₪ 9.686
Each (In a Tube of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | ₪ 8.279 | ₪ 82.79 |
50 - 90 | ₪ 7.146 | ₪ 71.46 |
100 - 290 | ₪ 6.419 | ₪ 64.19 |
300 - 590 | ₪ 5.622 | ₪ 56.22 |
600+ | ₪ 5.594 | ₪ 55.94 |
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Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.