N-Channel MOSFET, 13 A, 500 V, 3-Pin TO-220F MagnaChip MDF13N50BTH

RS Stock No.: 871-4918Brand: MagnaChipManufacturers Part No.: MDF13N50BTH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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₪ 8.279

Each (In a Tube of 10) (ex VAT)

₪ 9.686

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 13 A, 500 V, 3-Pin TO-220F MagnaChip MDF13N50BTH
Select packaging type

₪ 8.279

Each (In a Tube of 10) (ex VAT)

₪ 9.686

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 13 A, 500 V, 3-Pin TO-220F MagnaChip MDF13N50BTH
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tube
10 - 40₪ 8.279₪ 82.79
50 - 90₪ 7.146₪ 71.46
100 - 290₪ 6.419₪ 64.19
300 - 590₪ 5.622₪ 56.22
600+₪ 5.594₪ 55.94

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip