N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH

RS Stock No.: 871-6649Brand: MagnaChipManufacturers Part No.: MDD3N50GRH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.39mm

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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₪ 3.482

Each (In a Tube of 50) (ex VAT)

₪ 4.074

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH

₪ 3.482

Each (In a Tube of 50) (ex VAT)

₪ 4.074

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 200₪ 3.482₪ 174.10
250 - 950₪ 2.993₪ 149.63
1000 - 2450₪ 2.699₪ 134.95
2500+₪ 2.517₪ 125.86

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.39mm

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip