N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH

RS Stock No.: 871-4909Brand: MagnaChipManufacturers Part No.: MDD1903RH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12.8 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

36.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.39mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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₪ 4.433

Each (On a Reel of 25) (ex VAT)

₪ 5.187

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH
Select packaging type

₪ 4.433

Each (On a Reel of 25) (ex VAT)

₪ 5.187

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
25 - 100₪ 4.433₪ 110.82
125 - 475₪ 3.818₪ 95.44
500 - 1225₪ 3.412₪ 85.30
1250+₪ 3.188₪ 79.71

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12.8 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

36.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.39mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip